Rudenko R.M.


Influence of tin on the formation of nanocrystalline silicon in thin films of a-Si and a-SiOx.
01.04.07 – solid state physics
Doctor of Philosophy degree (Candidate of science in Physics and Mathematics)

Dissertation research focuses on the influence of isovalent impurity of tin on the formation of nanocrystalline silicon in thin films of silicon and silicon oxide. It is found that the formation of crystalline phases in a-SiSn occurs at a lower temperature than in a-Si, with a correlation taking place between the crystallization temperature for Si clusters and the concentration of the tin impurity. It is shown that the tin impurity reduces and limits the growth of medium-sized silicon crystallites in the amorphous matrix of silicon with increasing temperature of isochronous annealing. For amorphous silicon films doped with tin the average size of the crystallites of silicon is less than 10 nm in a wider temperature range than for undoped films. It is found that doping with tin of silicon oxide films leads to a decrease in crystallization temperature of amorphous silicon inclusions. In the tin doped silicon oxide films Si nanocrystal sizes are smaller compared with the samples without tin.
Keywords: thin silicon films, silicon oxide films, tin doping, isochronous annealing, crystallization, nanocrystalline silicon.

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